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Статьи в зарубежных периодических изданиях 2005 г.
Golubkov, A.N., Yukhimchuk, A.A. Synthesis of the dihydride phase of vanadium // Journal of Alloys and Compound, 2005,Volume 404-406, Issue SPEC. ISS., 8 December, Pages 35-37
There are two constituents that determine success in synthesizing vanadium hydride: activation and supply of hydrogen to vanadium at an appropriate pressure. The most efficient activation has been found to occur, depending on the vacuum produced in a facility, in temperature ranges between 550 and 750 K or above 850 K. Dependencies of equilibrium sorption pressures of protium and deuterium over respective dihydride phases of vanadium are provided. At an atomic ratio of 0.85 ≤ X/V ≤ 1.5 (X is protium or deuterium), they take the following form, respectively, logP(Pa)=-2160/T+12.8 and logP(Pa)=-2480/T+13.6. At higher hydrogen concentrations, coefficients in the Van't Hoff equation are observed to depend on the hydrogen content. Based on the obtained experimental data on equilibrium sorption pressures and available literature data on isotopic effects, the same dependence of sorption pressure has been calculated for vanadium ditritide. For T/V=0.85, it is expressed as: logP(Pa)=-2490/T+13.4. Dependencies of equilibrium sorption pressures for all the three hydrogen isotopes at temperatures between 273 and 323 K and ratios of 0.85 ≤ (H, D or X)/V≤1.9 are presented in the form of diagrams.
Dubinov, A.Y., Saikov, S.K. Exact solution to the transcendental equation in the waveguide method of investigation of dielectrics // Radioelectronics and Communications Systems, 2005, Volume 48, Issue 6, Pages 54-55
The analytical solution is obtained for a transcendental equation related to measurement of complex permittivity of solid and liquid substances when the measurement is performed by the waveguide method in the microwave range.
Gurevich, G.M.a, Erzinkyan, A.L.b, Eversheim, P.D.c, Filimonov, V.T.d, Golovko, V.e, Herzog, P.c, Kraev, I.e, Lukhanin, A.A.f, Belyaev, A.A.f, Noga, V.I.f, Parfenova, V.P.b, Phalet, T.e, Rusakov, A.V.a, Severijns, N.e, Toporov, Yu.G.d, Vyachin, V.N., Zakoucki, D.h Angular distributions of О±-particles emitted by oriented 253Es and 255Fm nuclei // Bulletin of the Russian Academy of Sciences: Physic, 2005, Volume 69, Issue 5, Pages 821-826
a Institute for Nuclear Research, Russian Academy of Sciences, Moscow 117312, Russian Federation
b Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow 119992, Russian Federation
c Universitat Bonn, D-53013 Bonn, Germany
d Research Institute of Nuclear Reactors, Ulyanovsk Oblast 433510, Russian Federation
e Katholieke Universiteit, B-3001 Leuven, Belgium
f Kharkov Institute of Physics and Technology, Kharkov 61108, Ukraine
h Nuclear Research Institute, 250 68 RМЊezМЊ, Czech Republic
Angular distributions of a-particles emitted by well-deformed 253Es and 255Fm nuclei were measured in the temperature interval 10-1000 mK by the low-temperature nuclear orientation technique in order to study relation between angular anisotropy of
Pimenov, V.G., Pikulin, I.V., Drozhzhin, V.S., Sakharov, A.M., Zellnsky N.D.a Physico-chemical properties of the surface of ash microspheres according to data of reversed-phase gas chromatography // Solid Fuel Chemistry, 2005, Volume 39, Issue 3, Pages 73-81
a Zellnsky Institute of Organic Chemistry (Russian Academy of Sciences)
The authors have studied the physico-chemical properties of hollow aluminosilicate microspheres formed in the composition of fly ash (so-called ash microsphere) by means of the method of reversed-phase gas-adsorption chromatography in application to adhesion problems. The acid-base properties of the surface were determined.
Drennov, O.B., Davydov, A.I., Mikhajlov, A.L., Raevskij, V.A. Shear instability at the 'explosion product-metal' interface for sliding detonation of an explosive charge // Doklady Akademii Nauk, 2005, Volume 404, Issue 6, Pages 767-770
Registered experimentally perturbation growth at the 'explosion product-metal' contact interface is explain in the framework of Kelvin-Helmholtz instability development. Under these conditions, the near-interface metal layer undergoes short-term thermal strength loss. The critical (maximum) perturbation wavelength is estimated (perturbations with higher wavelength value should not grow).
Golubev, M.B.a, Kelner, S.R.a The gravitational field of a point charge and finiteness of self-energy // Journal of Experimental and Theoretical Physics, 2005, Volume 101, Issue 6, Pages 1071-1076
a Moscow Institute of Engineering Physics, Kashirskoe sh. 31, Moscow, 115409, Russian Federation
Singularities in the metric of classical solutions of the Einstein equations (the Schwarzschild, Kerr, Reissner-Nordstroem, and Kerr-Newman solutions) give rise to generalized functions in the Einstein tensor. A technique based on the limiting sequence of solutions is used to analyze these functions, which can have a more complex behavior than the Dirac d function. We show that the solutions will satisfy the Einstein equations everywhere if the energy-momentum tensor has an appropriate singular addition of nonelectromagnetic origin. When this addition term is included, the total energy turns out to be finite and equal to mc2, while the angular momentum for the Kerr and Kerr-Newman solutions is mca. Since the Reissner-Nordstroem and Kerr-Newman solutions correspond to a point charge in classical electrodynamics, the result allows us to take a fresh look at the divergence of the self-energy of a point charge.
Porkhaev, V.V., Zavialov, N.V., Punin, V.T., Telnov, A.V., Khokhlov, Yu.A. Conditions for the onset of superradiance regime in a relativistic electron bunch // Technical Physics, 2005, Volume 50, Issue 11, Pages 1470-1473
Problems associated with the formation of coherent oscillations of an ensemble of classical oscillators and their superradiance instability are considered. The dispersion properties of an electron bunch and the conditions for the generation of nonequilibrium radiation are determined in the quasi-steady anharmonic oscillator approximation.
Garanin, S.F., Ivanova, G.G., Karmishin, D.V., Sofronov, V.N. Diffusion of a megagauss field into a metal // Journal of Applied Mechanics and Technical Physics, 2005, Volume 46, Issue 2, March, Pages 153-159
The plane one-dimensional problem of the diffusion of a megagauss field into a metal wall is solved taking into account heat conduction and radiation transfer. At the interface, the magnetic field is assumed to be constant, and in this sense, the problem is close to the self-similar diffusion problem with parameters dependent on the self-similar variable x/Öt. It is shown that if heat conduction and radiation transfer are taken into account, in megagauss fields (in the examined formulation for fields B > 1.6 MGs) there is no loss of conductivity of the material evaporated by the magnetic field because of the formation of a plasma layer at the interface with a temperature in the electronvolt range. However, the role of the plasma layer in the structure of the skin layer remains insignificant up to fields B≈10 MGs.
Trunin, R.F., Boriskov, G.V., Belov, S.I., Bykov, A.I., Il'kaev, R.I., Simakov, G.V., Urlin, V.D., Shuikin, A.N. Shock-wave compression of hydrogen to pressures of 65 GPa // JETP Letters, 2005, Volume 82, Issue 5, Pages 284-286
The results of experiments on determining the shock-wave compression of initially solid hydrogen (protium) in the pressure range from 17 to 66 GPa are reported. The data have been obtained by using spherical explosive charges. Pressure in samples is created by the impact of a steel striker accelerated to maximum velocities of 23 km/s. Gaseous protium is converted to the solid state using a special cryogenic cooling system.
Orlov, L.K.a, Smyslova, T.N. Hydrogen desorption from the surface under the conditions of epitaxial growth of silicon layers from monosilane in vacuum // Semiconductors, 2005, Volume 39, Issue 11, Pages 1275-1279
a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russian Federation
For the first time, the desorption coefficient of hydrogen and activation energy of desorption are directly determined during the growth of an Si epitaxial layer from silane in vacuum using experimental data on the degree of surface coverage of an Si wafer with hydrogen. The results obtained are compared with earlier results obtained under low-temperature conditions, for example, by thermodesorption spectrometry. The found values are used to calculate the crystallization coefficient and its dependence on the growth temperature and decomposition rate for monosilane at the growth surface.
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